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參數(shù)資料
| 型號： | STW7NC80Z |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
| 中文描述： | N溝道800V的- 1.5ohm - 6A至- 247齊納保護PowerMESH⑩三MOSFET的 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 248K |
| 代理商： | STW7NC80Z |
STW7NC80Z
2/8
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
T
l
AVALANCHE CHARACTERISTICS
Symbol
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
Drain-source
Breakdown Voltage
Breakdown Voltage Temp.
Coefficient
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
DYNAMIC
Symbol
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
0.78
30
0.1
°C/W
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
Unit
I
AR
6
A
E
AS
250
mJ
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
I
D
= 250 μA, V
GS
= 0
800
V
BV
DSS
/
T
J
I
D
= 1 mA, V
GS
= 0
0.9
V/°C
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
1
μA
50
μA
I
GSS
V
GS
= ±20V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
4
5
V
R
DS(on)
Static Drain-source On
Resistance
1.5
1.8
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
6
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
=3A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
7
S
C
iss
C
oss
Input Capacitance
V
DS
= 25V, f = 1 MHz, V
GS
= 0
1600
pF
Output Capacitance
125
pF
C
rss
Reverse Transfer
Capacitance
12
pF
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| STW7NC90Z | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
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