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參數(shù)資料
| 型號(hào)： | STW44NM60 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 44A I(D) | TO-247AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 600V的五（巴西）直|第44A（?。﹟對(duì)247AA |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 47K |
| 代理商： | STW44NM60 |
1/6
TARGET DATA
April 2001
STW44NM60
N-CHANNEL 600V - 0.09
- 44A TO-247
MDmesh
Power MOSFET
I
TYPICAL R
DS
(on) = 0.09
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
I
TIGHT PROCESS CONTROL AND HIGH
MANUFACTURING YIELDS
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH
horizontal
layout. Theresulting producthas an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performancethat issignificantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh
family isvery suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
(
)Pulse width limitedby safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STW44NM60
600V
< 0.11
44 A
Parameter
Value
600
Unit
V
V
DGR
600
V
V
GS
Gate- source Voltage
±
30
V
I
D
Drain Current (continuos) at T
C
= 25
°
C
Drain Current (continuos) at T
C
= 100
°
C
44
A
I
D
28
A
I
DM
(
G
)
P
TOT
Drain Current (pulsed)
Total Dissipation at T
C
= 25
°
C
Derating Factor
176
A
260
W
2.08
W/
°
C
V/ns
°
C
°
C
dv/dt
Peak Diode Recovery voltage slope
6
T
stg
T
j
Storage Temperature
–65 to 150
Max. Operating Junction Temperature
150
1
2
3
TO-247
INTERNAL SCHEMATIC DIAGRAM
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