參數(shù)資料
型號: STVD901J
廠商: STMICROELECTRONICS
元件分類: 變?nèi)荻O管
英文描述: UHF BAND, 4 pF, SILICON, VARIABLE CAPACITANCE DIODE
封裝: SOD-323, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 216K
代理商: STVD901J
STVD901J
2/4
Symbol
Parameter
Value
Unit
Rth (j-a)
Junction to ambient
500
°C/W
THERMAL RESISTANCE
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
IR
Continuous reverse current
VR =6V
10
nA
STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)
Symbol
Parameter
Tests Conditions
Min.
Typ.
Max.
Unit
Ct
Diode capacitance
VR = 0.25 V
f = 1 MHz
3.6
4
4.4
pF
rf
Diode series resistance
VR = 1V
f = 100 MHz
0.5
Ohm
Ls
Series inductance
1.5
nH
Cd (0.25 V)
/ Cd (2.7 V)
Capacitance ratio
f = 1 MHz
2
ELECTRICAL CHARACTERISTICS
I (A)
R
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.0
2.0
4.0
6.0
8.0
10.0
Tj=125°C
Tj=100°C
Tj=75°C
Tj=25°C
V (V)
R
Fig. 1: Reverse leakage current versus reverse
voltage applied (typical values).
1.E+00
1.E+01
1.E+02
1.E+03
1.E+04
25
50
75
100
125
T (°C)
j
V =6V
R
I [T ] / I [T =25°C)
Rj
Fig. 2: Relative variation of reverse leakage cur-
rent versus junction temperature (typical values).
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