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參數(shù)資料
| 型號： | STV7801SP |
| 廠商： | 意法半導體 |
| 英文描述： | PLASMA DATA POWER SWITCH |
| 中文描述： | 等離子體數(shù)據(jù)電源開關 |
| 文件頁數(shù)： | 12/18頁 |
| 文件大?。?/td> | 196K |
| 代理商： | STV7801SP |
STV7801S
12/18
The timing of the control signals will be adjusted by
the trimmers of the RC cells. It is recommended to
enable the clamp signals (H-Clmp, L-Clmp) after
the rising (falling) edge of the output signal has
reached its maximum (minimum) value.
14 - RECOVERY FACTOR MEASUREMENT CONDITIONS
An idealised schematic of the Power Recovery application is defined below. The inductance (power sav-
ing mode) and the 2 capacitors (load, floating_supply) are external components for the D.P.S. device.
Figure 4. DPS Device : Functional Diagram
The Power Recovery Factor (PRF) in % is given
by the formula :
PRF = 100 x (Pc - Pr) / Pc.
– Pc is the theoretical capacitive power dissipated
in the switches S1, S2 of the Data Power Switch
device when S3, S4 are not activated. Pc is cal-
culated by the formula :
with F=switching frequency.
Cload = equivalent panel capacitance
– Pr is the power dissipated in the Data Power
Switch device when it is configured in a power re-
covery mode (S1, S2, S3, S4 activated). Pr is
calculated by multiplying the average current giv-
en by the current sensor A and the value of the
supply voltage
Vpp
.
PRF is affected by the external components of the
DPS device such as the inductance and the de-
coupling capacitors, also the layout of the applica-
tion.
Cload
Vssp
A
Vpp
Inductance
(Power Saving Mode)
S1
S2
S3
S4
Cfloating_supply
PC
Cload
V
pp
2xF
×
=
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