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參數(shù)資料
| 型號(hào)： | STV60NE06-16 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 60V - 0.013ohm - 60A PowerSO-10 STripFET POWER MOSFET |
| 中文描述： | ? -通道60V的- 0.013ohm - 60A章PowerSO - 10 STripFET功率MOSFET |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大?。?/td> | 52K |
| 代理商： | STV60NE06-16 |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1
62.5
0.5
300
o
C/W
oC/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
60
A
E
AS
350
mJ
ELECTRICAL CHARACTERISTICS
(T
J =
- 40 to 150
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A
V
GS
= 0
60
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
c
=125
o
C
1
10
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
I
D
= 250
μ
A
I
D
= 40 A
2
3
4
V
V
GS
= 10V
0.013
0.016
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
60
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=30 A
20
35
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
4600
580
140
pF
pF
pF
STV60NE06-16
2/6
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