- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380784 > STV160NF02L (意法半導(dǎo)體) N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET PDF資料下載
參數(shù)資料
| 型號： | STV160NF02L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET |
| 中文描述： | ? -通道20V的- 0.0016ohm - 160A章- PowerSO - 10 STripFET MOSFET的 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 96K |
| 代理商： | STV160NF02L |
STV160NF02L
N - CHANNEL 20V - 0.0016
- 160A - PowerSO-10
STripFET
MOSFET
I
TYPICAL R
DS(on)
= 0.0016
I
ULTRA LOWON-RESISTANCE
I
ULTRA FAST SWITCHING
I
100%AVALANCHE TESTED
I
VERY LOW GATE CHARGE
I
LOW THRESHOLD DRIVE
I
LOW PROFILE, VERY LOWPARASITIC
INDUCTANCE PowerSO-10PACKAGE
DESCRIPTION
The
STV160NF02L
generation
STMicroelectronics well established STripFET
process based on a very unique strip layout
design. The resulting MOSFET shows unrivalled
high packing density with ultra low on-resistance
and superior switching charactestics. Process
simplification
also
translates
manufacturing reproducibility. This device
particularly suitable for high current, low voltage
switching applicationwhere efficiency is crucial.
represents the
Application
second
Specific
of
into
improved
is
APPLICATIONS
I
BUCK CONVERTERSIN HIGH
PERFORMACETELECOMAND VRMs
DC-DC CONVERTERS
June 1999
INTERNAL SCHEMATIC DIAGRAM
1
10
PowerSO-10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
(
**
)
I
D
I
DM
(
)
P
tot
Parameter
Value
20
20
±
20
160
113
640
160
1.07
-65 to 175
175
Unit
V
V
V
A
A
A
W
W/
o
C
o
C
o
C
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
T
stg
T
j
(
**
) Limited only maximumjunction temperature allowed by PowerSO-10
TYPE
V
DSS
R
DS(on)
< 0.0025
I
D
STV160NF02L
20 V
160 A
CONNECTION DIAGRAM (TOP VIEW)
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STV160NF03L | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:2.5VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:330uF; Capacitance Tolerance: 20%; ESR:100mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| STV2180A | Base Band Chroma Delay Line(基帶色度延遲線) |
| STV2216 | BUS CONTROLLED NTSC/PAL TV PROCESSOR |
| STV2236 | IC BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR |
| STV223XH | IC BUS-CONTROLLED MULTISTANDARD SINGLE CHIP TV PROCESSOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STV160NF02L_04 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 20V - 0.0016ohm - 160A - PowerSO-10 STripFET MOSFET |
| STV160NF02LA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 20V 0.0018 OHM 160A POWERSO-10 STRIPFET POWER MOSFET |
| STV160NF02LAT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF02LT4 | 功能描述:MOSFET N-Ch 20 Volt 160 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STV160NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.0019ohm - 160A PowerSO-10 STripFET MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。