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參數(shù)資料
| 型號： | STTHR5R06FP |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC |
| 封裝： | PLASTIC, TO-220FPAC, 2 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 116K |
| 代理商： | STTHR5R06FP |
STTH5R06
2/9
Table 4: Thermal Resistance
Table 5: Static Electrical Characteristics
Pulse test:
* tp = 5 ms,
δ < 2%
** tp = 380 s,
δ < 2%
To evaluate the conduction losses use the following equation: P = 1.164 x IF(AV) + 0.128 IF
2
(RMS)
Table 6: Dynamic Characteristics
Symbol
Parameter
Value (max).
Unit
Rth(j-c)
Junction to case
TO-220AC / DPA / D2PAK
3.0
°C/W
TO-220FPAC
5.5
Symbol
Parameter
Test conditions
Min.
Typ
Max.
Unit
IR *
Reverse leakage current Tj = 25°C
VR = VRRM
20
A
Tj = 125°C
25
250
VF **
Forward voltage drop
Tj = 25°C
IF = 5A
2.9
V
Tj = 125°C
1.4
1.8
Symbol
Parameter
Test conditions
Min.
Typ Max.
Unit
trr
Reverse recovery
time
Tj = 25°C
IF = 0.5A Irr = 0.25A IR =1A
25
ns
IF = 1A dIF/dt = -50 A/s VR =30V
40
IRM
Reverse recovery
current
Tj = 125°C IF = 5A
VR = 400V
dIF/dt = -200 A/s
5.0
6.0
A
S factor Softness factor
0.35
Qrr
Reverse recovery
charges
110
nC
tfr
Forward recovery
time
Tj = 25°C IF = 5A
dIF/dt = 40 A/s
VFR = 1.1 x VFmax
150
ns
VFP
Forward recovery
voltage
Tj = 25°C IF = 5A
dIF/dt = 40 A/s
VFR = 1.1 x VFmax
4.5
V
Figure 1: Conduction losses versus average
current
Figure 2: Forward voltage drop versus forward
current
0
1
2
3
4
5
6
7
8
9
10
11
12
13
0123
4567
P(W)
T
δ=tp/T
tp
δ = 0.05 δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
I
(A)
F(AV)
0
5
10
15
20
25
30
35
40
45
50
012
3456
I
(A)
FM
V
(V)
FM
T =25°C
(maximum values)
j
T =125°C
(maximum values)
j
T =125°C
(typical values)
j
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