參數(shù)資料
型號(hào): STTH802CFP
廠商: 意法半導(dǎo)體
英文描述: HIGH EFFICIENCY ULTRAFAST DIODE
中文描述: 高效超快二極管
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 103K
代理商: STTH802CFP
STTH802/CT/CB/CFP
3/8
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
I
(A)
F(av)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
= 1
T
δ
=tp/T
tp
P
(W)
F(av)
Fig. 1:
Average forward power dissipation versus
average forward current (per diode).
0
10
20
30
40
50
60
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
P = 5W
P = 2W
P = 10W
I (A)
M
δ
T
δ
=tp/T
tp
Fig.2:
Peakcurrentversusformfactor(perdiode).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
V
(V)
FM
Tj=25°C
Maximum values
Maximum values
Tj=125°C
Typical values
Tj=125°C
I
(A)
FM
Fig. 3:
current (per diode).
Forward voltage drop versus forward
0.0
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
tp(s)
Zth(j-c) / Rth(j-c)
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 4-2:
Relative variation of thermal impedance
junction to case versus duration (TO-220FPAB).
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
tp(s)
Zth(j-c) / Rth(j-c)
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
T
δ
=tp/T
tp
Fig. 4-1:
Relative variation of thermal impedance
junction to case versus pulse duration (TO-220AB,
DPAK).
0
1.E-03
10
20
30
40
50
60
70
1.E-02
1.E-01
1.E+00
t(s)
Tc=25°C
Tc=75°C
Tc=125°C
I (A)
M
I
M
t
δ
=0.5
Fig. 5-1:
current
(TO-220AB, DPAK).
Non repetitive surge peak forward
versus
overload
duration
per
diode
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