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參數(shù)資料
| 型號： | STTH6002CW |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | HIGH EFFICIENCY ULTRAFAST DIODE |
| 中文描述： | 高效超快二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 62K |
| 代理商： | STTH6002CW |
STTH6002C
2/5
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
I
R
*
Reverse leakage
current
Tj = 25°C
V
R
= V
RRM
30
μA
Tj = 125°C
30
300
V
F
**
Forward voltage drop
Tj = 25°C
I
F
= 30 A
1.05
V
Tj = 25°C
I
F
= 60 A
1.18
Tj = 150°C
I
F
= 30 A
0.75
0.84
Tj = 150°C
I
F
= 60 A
0.99
Pulse test: * tp = 5ms,
δ
< 2%
** tp = 380μs,
δ
< 2%
To evaluate the maximum conduction losses use the following equation :
P = 0.69 x I
F(AV)
+ 0.005 I
F2(RMS)
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Maximum
Unit
R
th (j-c)
Junction to case
Per diode
1.2
°
C/W
Per device
0.8
R
th (j-c)
Coupling
0.4
°C/W
When the diodes 1 and 2 are used simultaneously:
Tj (diode1) = P(diode1) x R
th(j-c)
(per diode) + P(diode2) x R
th(c)
THERMAL PARAMETERS
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse
recovery time
Tj = 25°C
I
F
= 1 A V
R
= 30V
dI
F
/dt = 200 A/μs
22
27
ns
I
RM
Reverse
recovery current
Tj = 125°C
I
F
= 30 A V
R
= 160V
dI
F
/dt = 200 A/μs
6.3
8.2
A
t
fr
Forward
recovery time
Tj = 25°C
I
F
= 30 A dI
F
/dt = 200 A/μs
V
FR
= 1.1 x V
F
max
220
ns
V
FP
Forward
recovery voltage
Tj = 25°C
I
F
= 30 A dI
F
/dt = 200 A/μs
2.5
V
DYNAMIC ELECTRICAL CHARACTERISTICS
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STTH6003 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH FREQUENCY SECONDARY RECTIFIER |
| STTH6003CW | 功能描述:整流器 2X30 Amp 300 Volt BULK RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| STTH6003CW | 制造商:STMicroelectronics 功能描述:DIODE ULTRA FAST 2X30A |
| STTH6003TV | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:HIGH FREQUENCY SECONDARY RECTIFIER |
| STTH6003TV1 | 制造商:STMicroelectronics 功能描述:DIODE ULTRA FAST 2X30A |
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