參數(shù)資料
型號(hào): STTH4R02S
廠(chǎng)商: 意法半導(dǎo)體
英文描述: Ultrafast recovery diode
中文描述: 超快恢復(fù)二極管
文件頁(yè)數(shù): 4/13頁(yè)
文件大小: 130K
代理商: STTH4R02S
Characteristics
STTH4R02
4/13
Forward voltage drop versus
forward current (maximum values)
Relative variation of thermal
impedance, junction to case,
versus pulse duration
(TO-220FPAC)
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (DO-201AB)
Figure 3.
Figure 4.
Relative variation of thermal
impedance, junction to case,
versus pulse duration (T0-220AC,
DPAK)
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
I
FM
(A)
T
j
=25°C
T
j
=150°C
V
FM
(V)
0.1
1.E-03
1.0
1.E-02
1.E-01
1.E+00
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220AC
DPAK
tp(s)
Figure 5.
Figure 6.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMB)
0.0
1.E-03
0.1
1.0
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)
/R
th(j-c)
Single pulse
TO-220FPAC
tp(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)
/R
th(j-a)
SMB
S
Cu
=1cm2
t
p
(s)
Figure 7.
Figure 8.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration (SMC)
1
1.E-03
10
100
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)
(°C/W)
Single pulse
DO201AB
tp(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-a)
/R
th(j-a)
SMC
S
Cu
=1cm2
t
p
(s)
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