參數(shù)資料
型號(hào): STTH302RL
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
封裝: D0-201AD, 2 PIN
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 45K
代理商: STTH302RL
STTH302
3/5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IF(av)(A)
T
δ=tp/T
tp
PF(av)(W)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
Fig. 1: Average forward power dissipation versus
average forward current.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
25
50
75
100
125
150
175
Tamb(°C)
Rth(j-a)=Rth(j-l)
Rth(j-a)=75°C/W
IF(av)(A)
Fig. 2: Average forward current versus ambient
temperature (
δ=0.5).
0
10
20
30
40
50
60
70
80
90
5
10152025
Lleads(mm)
Rth(j-a)
Rth(j-l)
Rth(°C/W)
Fig. 3: Thermal resistance versus lead length.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
tp(s)
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
T
δ=tp/T
tp
Zth(j-a)/Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed
circuit board epoxy FR4, LIeads = 10mm).
10
100
1
10
100
1000
VR(V)
F=1MHz
Vosc=30mV
Tj=25°C
C(pF)
Fig. 6: Junction capacitance versus reverse
voltage applied (typical values).
0.1
1.0
10.0
100.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VFM(V)
Tj=25°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Maximum values)
Tj=125°C
(Typical values)
Tj=125°C
(Typical values)
IFM(A)
Fig. 5: Forward voltage drop versus forward
current.
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