參數(shù)資料
型號: STTH1R04Q
廠商: STMICROELECTRONICS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 400 V, SILICON, SIGNAL DIODE, DO-15
封裝: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件頁數(shù): 4/10頁
文件大?。?/td> 131K
代理商: STTH1R04Q
STTH1R04
Characteristics
3/10
Table 5.
Dynamic characteristics (Tj = 25 °C unless otherwise stated)
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
trr
Reverse recovery time
IF = 1 A, dIF/dt = -50 A/s,
VR = 30 V, Tj = 25 °C
30
ns
IF = 1 A, dIF/dt = -100 A/s,
VR = 30 V, Tj = 25 °C
14
20
IRM
Reverse recovery current
IF = 1 A, dIF/dt = -200 A/s,
VR = 320 V, Tj = 125 °C
2.5
3.5
A
tfr
Forward recovery time
IF = 1 A
dIF/dt = 100 A/s
VFR = 1.1 x VFmax, Tj = 25 °C
50
ns
VFP
Forward recovery voltage
IF = 1 A
dIF/dt = 100 A/s
3.5
V
Figure 1.
Conduction losses versus
average forward current
Figure 2.
Forward voltage drop versus
forward current
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.0
0.2
0.4
0.6
0.8
1.0
1.2
P(W )
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
T
δ=tp/T
tp
IF(AV)(A)
0
5
10
15
20
25
30
35
40
45
50
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
I
FM(A)
T
J=150°C
(Maximum values)
T
J=150°C
(Maximum values)
T
J=150°C
(Typical values)
T
J=150°C
(Typical values)
T
J=25°C
T
J =25°C
(Maximum values)
VFM(V)
Figure 3.
Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-41)
Figure 4.
Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-15)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-l)/Rth(j-l)
Single pulse
DO-41
L
leads=10mm
tP(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Z
th(j-l)/Rth(j-l)
Single pulse
DO-15
Lleads=10mm
tP(s)
相關PDF資料
PDF描述
STTH1R04U 1 A, 400 V, SILICON, SIGNAL DIODE
STTH3R04Q 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
STTH3R04RL 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
STTH3R04S 3 A, 400 V, SILICON, RECTIFIER DIODE
STTH3R04 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
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