參數(shù)資料
型號: STTH12S06
廠商: 意法半導體
英文描述: Turbo 2 ultrafast high voltage rectifier
中文描述: 渦輪2超快高壓整流器
文件頁數(shù): 1/6頁
文件大?。?/td> 80K
代理商: STTH12S06
October 2007
Rev 1
1/6
6
STTH12S06
Turbo 2 ultrafast high voltage rectifier
Table 1.
Features and benefits
Ultrafast recovery
Low reverse recovery current
Reduces losses in diode and switching
transistor
Low thermal resistance
Higher frequency operation
Insulated voltage: 1500 V
RMS
Description
ST's STTH12S06 is a state of the art Ultrafast
recovery diode. By the use of 600 V Pt doping
Planar technology, this diode will outperform the
power factor correction circuits operating in
hardswitching conditions. The extremely low
reverse recovery current of the STTH12S06,
reduces significantly the switching power losses
of the MOSFET, and thus increases the
efficiency of the application. This allows designers
to reduce the size of their heatsinks.
This device is also intended for applications in
power supplies and power conversions systems,
and other power switching applications.
Table 2.
Main product characteristics
I
F(AV)
V
RRM
I
RM (typ.)
T
j (max)
V
F (typ)
t
rr (typ)
12 A
600 V
6 A
175 °C
1.5 V
14 ns
TO-220FPAC
STTH12S06FP
A
K
Absolute ratings (limiting values at 125 °C, unless otherwise stated)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
600
V
I
F(AV
)
Average forward current
12
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal
100
A
T
stg
Storage temperature range
- 65 + 175
°C
T
j
Maximum operating junction temperature
175
°C
www.st.com
相關PDF資料
PDF描述
STTH12S06FP Turbo 2 ultrafast high voltage rectifier
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