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參數資料
| 型號： | STT818B |
| 廠商： | 意法半導體 |
| 英文描述： | HIGH GAIN LOW VOLTAGE PNP POWER TRANSISTOR |
| 中文描述： | 高增益低電壓PNP功率晶體管 |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 142K |
| 代理商： | STT818B |
STT818B
HIGH GAIN LOW VOLTAGE
PNP POWER TRANSISTOR
I
VERY LOW COLLECTOR TO EMITTER
SATURATION VOLTAGE
I
DC CURRENT GAIN > 100 (h
FE
)
I
3 A CONTINUOUS COLLECTOR CURRENT
(I
C
)
I
SURFACE-MOUNTING SOT23-6L PACKAGE
IN TAPE & REEL
APPLICATIONS
I
POWER MANAGEMENT IN PORTABLE
EQUIPMENTS
I
SWITCHING REGULATOR IN BATTERY
CHARGER APPLICATIONS
DESCRIPTION
The device is manufactured in low voltage PNP
Planar Technology by using a "Base Island"
layout.
The resulting Transistor shows exceptional high
gain performance coupled with very low
saturation voltage.
INTERNAL SCHEMATIC DIAGRAM
July 2002
SOT23-6L
(TSOP6)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Value
-30
-30
-5
-3
-6
-0.2
-0.5
1.2
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
C
= 25
o
C
Storage Temperature
Max. Operating Junction Temperature
Type
Marking
STT818B
818B
1/5
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