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參數(shù)資料
| 型號： | STT320GK18 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Thyristor-Thyristor Modules |
| 中文描述： | 晶閘管，晶閘管模塊 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 339K |
| 代理商： | STT320GK18 |
STT320
Thyristor-Thyristor Modules
Symbol
Test Conditions
Characteristic Values
Unit
I
RRM
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
70
mA
FEATURES
* International standard package
* Direct copper bonded Al
2
O
3
-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
mA
I
DRM
40
V
V
T
, V
F
I
T
, I
F
=600A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=140
o
C)
1.32
V
TO
0.8
V
r
T
0.82
m
V
D
=6V; T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=6V; T
VJ
=25
o
C
T
VJ
=-40
o
C
V
GT
2
3
V
I
GT
150
200
mA
V
GD
T
VJ
=T
VJM
; V
D
=2/3V
DRM
0.25
V
I
GD
10
mA
I
H
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=1A; di
G
/dt=1A/us
150
mA
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
200
mA
I
L
per thyristor/diode; DC current
per module
R
thJC
0.112
0.056
K/W
per thyristor/diode; DC current
per module
R
thJK
0.152
0.076
K/W
d
S
Creeping distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
m/s
2
a
Maximum allowable acceleration
50
t
gd
2
us
T
VJ
=T
VJM
; I
T
=300A; t
p
=200us; -di/dt=10A/us typ.
V
R
=100V; dv/dt=50V/us; V
D
=2/3V
DRM
T
VJ
=125
o
C; I
T
, I
F
=400A; -di/dt=50A/us
t
q
200
us
uC
Q
S
760
I
RM
275
A
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