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參數(shù)資料
| 型號： | STT1NF100 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 100V - 0.7ohm - 1A SOT23-6L STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.7ohm - 1A條采用SOT23 - 6L STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 97K |
| 代理商： | STT1NF100 |
1/6
PRELIMINARY DATA
September 2002
STT1NF100
N-CHANNEL 100V - 0.7
- 1A SOT23-6L
STripFET II POWER MOSFET
(1) I
SD
≤
1A, di/dt
≤
350A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
I
TYPICAL R
DS(on)
= 0.7
I
EXCEPTIONAL dv/dt CAPABILITY
I
VERY LOW Qg
DESCRIPTION
This Power MOSFET is the latest development of ST-
Microelectronics unique “Single Feature Size
”
strip-
based process. The resulting transistor shows ex-
tremely high packing density for low on-resistance,
rugged avalance characteristics and less critical align-
ment steps therefore a remarkable manufacturing re-
producibility.
APPLICATIONS
I
DC-DC & DC-AC CONVERTERS
I
DC MOTOR CONTROL (DISK DRIVES, etc.)
I
SYNCHRONOUS RECTIFICATION
MARKING
I
STQ0
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt(1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STT1NF100
100V
<0.8
1A
Parameter
Value
Unit
100
V
100
V
± 20
V
1
A
0.6
A
4
A
1.6
W
0.013
20
W/°C
V/ns
– 55 to 150
°C
SOT23-6L
INTERNAL SCHEMATIC DIAGRAM
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