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參數(shù)資料
| 型號(hào)： | STS5PF20V |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | P-CHANNEL 20V - 0.065 ohm - 5A SO-8 2.5V-DRIVE STripFET II POWER MOSFET |
| 中文描述： | P通道20V的- 0.065歐姆- 5A條的SO - 8 2.5V的驅(qū)STripFET二功率MOSFET |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 173K |
| 代理商： | STS5PF20V |
STS5PF20V
2/8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
( )
Pulse width limited by safe operating area
Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
THERMAL DATA
Rthj-amb
T
j
T
stg
ELECTRICAL CHARACTERISTICS
(T
J
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Value
Unit
20
V
20
V
± 8
V
5
A
3.1
A
20
A
2.5
W
Thermal Resistance Junction-ambient Max
50
°C/W
Max. Operating Junction Temperature
–55 to 150
°C
Storage Temperature
–55 to 150
°C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
20
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ± 8V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 4.5V, I
D
= 2.5 A
V
GS
= 2.5V, I
D
= 2.5 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
0.45
V
Static Drain-source On
Resistance
0.065
0.080
0.085
0.10
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 2.5 A
V
DS
= 15 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
6.6
Max.
Unit
S
Forward Transconductance
Input Capacitance
412
pF
Output Capacitance
179
pF
Reverse Transfer
Capacitance
42.5
pF
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