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參數(shù)資料
| 型號： | STS4NF100 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 100V - 0.065 ohm - 4A SO-8 STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道100V的- 0.065歐姆- 4A條的SO - 8 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 274K |
| 代理商： | STS4NF100 |
1/8
July 2001
.
STS4NF100
N-CHANNEL 100V - 0.065
- 4A SO-8
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.065
I
EXCEPTIONAL dv/dt CAPABILITY
I
100 % AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STS4NF100
100 V
<0.070
4 A
SO-8
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
Drain Current (continuos) at T
C
= 25°C
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
(
)
Pulse width limited by safe operating area.
Parameter
Value
100
100
± 20
4
2.5
16
2.5
Unit
V
V
V
A
A
A
W
I
D
INTERNAL SCHEMATIC DIAGRAM
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