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參數(shù)資料
| 型號(hào)： | STS3400 |
| 廠商： | SamHop Microelectronics Corp. |
| 英文描述： | N-Channel E nhancement Mode F ield E ffect Trans is tor |
| 中文描述： | N溝道位置nhancement F型爾德位置ffect跨是Tor |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 716K |
| 代理商： | STS3400 |
STS3400
Parameter
Symbol
Condition
Min
Typ
Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.25A
0.82
1.2
V
b
C
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 4. On-Resistance Variation with
Temperature
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
5
0 5 10 15 20 25 30
Ciss
Coss
1000
800
600
400
200
0
20
16
12
8
4
0
0
1
2
3
4
5
6
V
GS
=10,9,8,7,6V
V
GS
=3V
3
2.2
1.8
1.4
1.0
0.6
0.2
0
-50
0
50
100
125
Tj( C)
-25
25
75
V
GS
=10V
I
D
=3.5A
Crss
25 C
25
20
15
10
5
0
0.0
0.6
1.2
1.8
2.4
3.0
3.6
Tj=125 C
-55 C
V
GS
=4V
V
GS
=5V
O
R
D
,
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