參數(shù)資料
型號(hào): STRH50P6FSY1
廠商: 意法半導(dǎo)體
英文描述: P-channel 60V - 0.047ヘ - TO-254AA Rad-hard low gate charge STripFET⑩ Power MOSFET
中文描述: P溝道60V的- 0.047ヘ-對(duì)254AA抗輻射低柵極電荷STripFET⑩功率MOSFET
文件頁(yè)數(shù): 1/13頁(yè)
文件大小: 226K
代理商: STRH50P6FSY1
November 2007
Rev 3
1/13
13
STRH50P6FSY1
STRH50P6FSY3
P-channel 60V - 0.047
- TO-254AA
Rad-hard low gate charge STripFET Power MOSFET
Features
Low R
DS(on)
Fast switching
Single event effect (SEE) hardned
Low total gate charge
Light weight
100% avalanche tested
Application oriented characterization
Hermetically sealed
Heavy ion SOA
100 kRad TID
SEL & SEGR with 34Mev/cm2/mg LET ions
Applications
Satellite
High reliability
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Table 1.
Device summary
Figure 1.
Internal schematic diagram
Type
V
DSS
STRH50P6FSY1
60 V
STRH50P6FSY3
60 V
TO-254AA
1
2
3
Order codes
Marking
Package
Packaging
STRH50P6FSY1
(1)
RH50P6FSY1
TO-254AA
Individual strip pack
STRH50P6FSY3
(2)
RH50P6FSY3
TO-254AA
Individual strip pack
1.
Mil temp range
2.
Space flights parts (full ESCC flow screening)
www.st.com
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