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        參數(shù)資料
        型號(hào): STR912FAZ42H6T
        廠商: 意法半導(dǎo)體
        英文描述: ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA
        中文描述: ARM966E -虜⑩16/32位閃存微控制器與以太網(wǎng),USB,加拿大,交流電機(jī)控制,4個(gè)定時(shí)器,模數(shù)轉(zhuǎn)換器,RTC和DMA的
        文件頁(yè)數(shù): 63/99頁(yè)
        文件大?。?/td> 979K
        代理商: STR912FAZ42H6T
        STR91xFAx32 STR91xFAx42 STR91xFAx44
        Electrical characteristics
        63/99
        7.6
        Supply current characteristics
        V
        DDQ
        = 2.7 - 3.6V, V
        DD
        = 1.65 - 2V, T
        A
        = -40 / 85 °C unless otherwise specified.
        Table 16.
        Figure 15.
        Sleep mode current vs temperature with LVD on
        Supply current characteristics
        Symbol
        Parameter
        Test Conditions
        Value
        Unit
        Min
        Typ
        Max
        I
        DDRUN
        Run Mode Current
        All peripherals
        on
        CPU_CLK =
        96 MHz
        (1)(2)
        1.
        ARM core and peripherals active with all clocks on. Power can be conserved by turning off clocks to
        peripherals which are not required.
        2.
        mA/MHz data valid down to 10 MHz. Below this frequency the ratio mA/MHz increases.
        1.7
        2.3
        mA/MHz
        All peripherals
        off
        1.3
        1.6
        I
        IDLE
        Idle Mode Current
        All peripherals on
        (2)(3)
        3.
        ARM core stopped and all peripheral clocks active.
        1.14
        1.7
        mA/MHz
        All peripherals off
        (2)(4)
        4.
        ARM core stopped and all peripheral clocks stopped.
        0.45
        0.75
        mA/MHz
        I
        SLEEP(IDD)
        Sleep Mode
        Current, I
        DD
        LVD On
        (5)
        55
        825
        μA
        LVD Off
        (5)
        5.
        ARM core and all peripheral clocks stopped (with exception of RTC)
        50
        820
        μA
        I
        SLEEP(IDDQ)
        Sleep Mode
        Current, I
        DDQ
        LVD On
        (4)
        7
        TBD
        μA
        LVD Off
        (4)
        7
        TBD
        μA
        I
        RTC_STBY
        RTC Standby
        Current
        Measured on VBATT pin
        0.9
        1.2
        μA
        I
        SRAM_STBY
        SRAM Standby
        Current
        Measured on VBATT pin
        5
        240
        μA
        0
        200
        400
        600
        800
        1000
        1200
        1400
        1600
        1800
        2000
        0
        20
        40
        60
        80
        100
        120
        -20
        -40
        I
        TEMP [°C]
        Vcc = 1.8 V and
        standard process
        Vcc = 2.0 V
        and corner process
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