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參數資料
| 型號： | STR912FAM44X6T |
| 廠商： | 意法半導體 |
| 英文描述： | ARM966E-S⑩ 16/32-Bit Flash MCU with Ethernet, USB, CAN, AC motor control, 4 timers, ADC, RTC, DMA |
| 中文描述： | ARM966E -虜⑩16/32位閃存微控制器與以太網，USB，加拿大，交流電機控制，4個定時器，模數轉換器，RTC和DMA的 |
| 文件頁數： | 58/99頁 |
| 文件大?。?/td> | 979K |
| 代理商： | STR912FAM44X6T |
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Electrical characteristics
STR91xFAx32 STR91xFAx42 STR91xFAx44
58/99
Figure 11.
Pin input voltage
7.2
Absolute maximum ratings
This product contains devices to protect the inputs against damage due to high static
voltages. However, it is advisable to take normal precautions to avoid application of any
voltage higher than the specified maximum rated voltages. It is also recommended to
ground any unused input pin to reduce power consumption and minimize noise.
Table 10.
Note:
Stresses exceeding above listed recommended "Absolute Maximum Ratings" may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability. During overload conditions (V
IN
>V
DDQ
or
V
IN
<V
SSQ
) the voltage on pins with respect to ground (V
SSQ
) must not exceed the
recommended values.
V
IN
STR9 PIN
Absolute maximum ratings
Symbol
Parameter
Value
Unit
Min
Max
V
DD
Voltage on VDD pin with respect to ground V
SS
-0.3
2.4
V
V
DDQ
Voltage on VDDQ pin with respect to ground V
SS
-0.3
4.0
V
V
BATT
Voltage on VBATT pin with respect to ground V
SS
-0.3
4.0
V
AV
DD
Voltage on AVDD pin with respect to ground V
SS
(128-pin and 144-ball packages)
-0.3
4.0
V
AV
REF
Voltage on AVREF pin
with respect to ground V
SS
(128-pin and 144-ball packages)
-0.3
4.0
V
AV
REF_AVDD
Voltage on AVREF_AVDD pin with respect to
Ground V
SS
(80-pin package)
-0.3
4.0
V
V
IN
Voltage on 5V tolerant pins with respect to ground
V
SS
-0.3
5.5
V
Voltage on any other pin with respect to ground
V
SS
-0.3
4.0
V
T
ST
Storage Temperature
-55
+150
°C
T
J
Junction Temperature
+125
°C
ESD
ESD Susceptibility (Human Body Model)
2000
V
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