參數(shù)資料
型號: STR736FV1T6
廠商: 意法半導(dǎo)體
英文描述: ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces
中文描述: ARM7TDMI的32位微控制器的閃存,3倍的CAN,4個UART,20定時器,ADC和12通信設(shè)備。接口
文件頁數(shù): 36/53頁
文件大?。?/td> 764K
代理商: STR736FV1T6
Electrical parameters
STR73xF
36/53
3.3.4
EMC characteristics
Susceptibility tests are performed on a sample basis during product characterization.
Functional EMS (Electro Magnetic Susceptibility)
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
the product is stressed by two electro magnetic events until a failure occurs (indicated by the
LEDs).
ESD
: Electro-Static Discharge (positive and negative) is applied on all pins of the
device until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.
FTB
: A Burst of Fast Transient voltage (positive and negative) is applied to V
DD
and
V
SS
through a 100pF capacitor, until a functional disturbance occurs. This test
conforms with the IEC 1000-4-4 standard.
A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.
Designing hardened software to avoid noise problems
EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.
Software recommendations:
The software flowchart must include the management of runaway conditions such as:
Corrupted program counter
Unexpected reset
Critical Data corruption (control registers...)
Prequalification trials:
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
Table 18.
EMS data
Symbol
Parameter
Conditions
Level/
Class
V
FESD
Voltage limits to be applied on any I/O pin to
induce a functional disturbance
V
DD
=
5V, T
A
=
+25°C, f
MCLK
=
36MHz
conforms to IEC 1000-4-2
4A
V
EFTB
Fast transient voltage burst limits to be
applied through 100pF on V
DD
and V
SS
pins
to induce a functional disturbance
V
DD
=
5V, T
A
=
+25°C, f
MCLK
=
36MHz
conforms to IEC 1000-4-4
4A
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參數(shù)描述
STR736FV1T7 功能描述:ARM微控制器 - MCU 32Bit MCU with Flash STR73xF ARM7TDMI RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
STR736FV2T6 功能描述:ARM微控制器 - MCU 16/32 MCU RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
STR736FV2T7 功能描述:ARM微控制器 - MCU 32Bit MCU with Flash STR73xF ARM7TDMI RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT
STR736FVX 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces
STR73XF 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. interfaces