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參數(shù)資料
| 型號： | STR730F |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | ARM7TDMI 32-bit MCU with Flash, 3x CAN, 4 UARTs, 20 timers, ADC, 12 comm. Interfaces(帶16通道DMA、片內(nèi)RC和內(nèi)部FLASH和RAM的ARM7) |
| 中文描述： | ARM7TDMI的32位微控制器的閃存，3倍的CAN，4個UART，20定時器，ADC和12通信設(shè)備。接口（帶16通道的DMA，片內(nèi)區(qū)局和內(nèi)部閃存和內(nèi)存的基于ARM7） |
| 文件頁數(shù)： | 37/53頁 |
| 文件大小： | 1520K |
| 代理商： | STR730F |
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STR73xF
Electrical parameters
37/53
Electro Magnetic Interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
Table 19.
Absolute Maximum Ratings (Electrical Sensitivity)
Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.
Electro-Static Discharge (ESD)
Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard.
Table 20.
Notes:
1.
Data based on characterization results, not tested in production.
Static and Dynamic Latch-Up
●
LU
: 3 complementary static tests are required on 10 parts to assess the latch-up
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
EMI data
Symbol
Parameter
Conditions
Monitored
Frequency Band
Max vs.
[f
OSC4M
/f
MCLK
]
Unit
6/36MHz
8/8MHz
S
EMI
Peak level
V
DD
=
5.0V,
T
A
=
+25°C,
All packages
0.1MHz to 30MHz
23
30
dBμV
30MHz to 130MHz
37
34
130MHz to 1GHz
20
7
SAE EMI Level
4
3.5
-
ESD Absolute Maximum ratings
Symbol
Ratings
Conditions
Maximum
value
1)
Unit
V
ESD(HBM)
Electro-static discharge voltage
(Human Body Model)
T
A
=
+25°C
2000
V
V
ESD(MM)
Electro-static discharge voltage
(Machine Model)
200
V
ESD(CDM)
Electro-static discharge voltage
(Charge Device Model)
750 on corner
pins, 500 on
others
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STR730FZ1H6 | 功能描述:ARM微控制器 - MCU 32Bit MCU with Flash STR73xF ARM7TDMI RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STR730FZ1H7 | 功能描述:ARM微控制器 - MCU LFBGA 10x10x1.7 144 F12x12 0.8 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STR730FZ1T6 | 功能描述:ARM微控制器 - MCU 32Bit MCU with Flash STR73xF ARM7TDMI RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STR730FZ1T7 | 功能描述:ARM微控制器 - MCU LQFP 144 20X20X1.4 2 RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
| STR730FZ2H6 | 功能描述:ARM微控制器 - MCU 32-Bit ARM7TDMI MCU WITH FLASH 3x CAN RoHS:否 制造商:STMicroelectronics 核心:ARM Cortex M4F 處理器系列:STM32F373xx 數(shù)據(jù)總線寬度:32 bit 最大時鐘頻率:72 MHz 程序存儲器大小:256 KB 數(shù)據(jù) RAM 大小:32 KB 片上 ADC:Yes 工作電源電壓:1.65 V to 3.6 V, 2 V to 3.6 V, 2.2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:LQFP-48 安裝風(fēng)格:SMD/SMT |
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