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參數(shù)資料
| 型號(hào)： | STQ1NC60 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 106K |
| 代理商： | STQ1NC60 |
3/7
STQ1NC60
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 300V, I
D
= 0.5 A
R
G
= 4.7
, V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
Max.
Unit
Turn-on Delay Time
Rise Time
7.2
ns
t
r
8
ns
Q
g
Q
gs
Q
gd
TotalGate Charge
V
DD
= 480V, I
D
= 1 A,
V
GS
= 10V, R
G
= 4.7
7.3
10
nC
Gate-Source Charge
3.4
nC
Gate-Drain Charge
2.5
nC
Parameter
Test Conditions
V
DD
= 480 V,I
D
= 1 A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
33
ns
Fall Time
11
ns
Cross-over Time
43
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
0.3
A
Source-drain Current (pulsed)
1.2
A
Forward On Voltage
I
SD
= 0.3 A, V
GS
= 0
I
SD
= 1 A, di/dt = 100A/
μ
s,
V
DD
= 25V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
450
ns
Reverse Recovery Charge
720
μ
C
Reverse Recovery Current
3.2
A
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