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參數(shù)資料
| 型號(hào)： | STPS30SM100SFP |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 30 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC, TO-220FPAB, 3 PIN |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 145K |
| 代理商： | STPS30SM100SFP |
Characteristics
STPS30SM100S
2/10
Doc ID 15517 Rev 2
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.580 x IF(AV) + 0.0033 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values with terminals 1 and 3 short circuited)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
100
V
IF(RMS)
Forward current rms
60
A
IF(AV)
Average forward current
δ = 0.5
TO-220AB, D2PAK, I2PAK, Tc = 125 °C
30
A
TO-220FPAB, Tc = 80 °C
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal,
terminals 1 and 3 short circuited
530
A
PARM
(1)
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
21500
W
VARM
(2)
Maximum repetitive peak avalanche
voltage
tp < 1 s Tj < 150 °C
IAR < 53.8 A
120
V
VASM
Maximum single pulse peak
avalanche voltage
tp < 1 s Tj < 150 °C
IAR < 53.8 A
120
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (3)
150
°C
1.
For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2.
Refer to Figure 13.
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB, D2PAK, I2PAK
1
°C/W
TO-220FPAB
4
Table 4.
Static electrical characteristics (terminals 1 and 3 short circuited)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
45
A
Tj = 125 °C
15
45
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 5 A
500
mV
Tj = 125 °C
420
Tj = 25 °C
IF = 10A
600
670
Tj = 125 °C
505
560
Tj = 25 °C
IF = 30 A
780
870
Tj = 125 °C
630
690
1.
Pulse test: tp = 5 ms, δ < 2%
2.
Pulse test: tp = 380 s, δ < 2%
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| STPS30SM100SG-TR | 功能描述:肖特基二極管與整流器 100V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| STPS30SM100SR | 功能描述:肖特基二極管與整流器 100V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| STPS30SM100ST | 功能描述:肖特基二極管與整流器 100V 30A RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| STPS30SM100STN | 制造商:STMicroelectronics 功能描述: 制造商:STMicroelectronics 功能描述:DIODE SCHOTTKY 30A 100V TO-220FP 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP, Diode Type:Schottky, Diode Configuration:S 制造商:STMicroelectronics 功能描述:DIODE, SCHOTTKY, 30A, 100V ,TO-220FP, Diode Type:Schottky, Diode Configuration:Single, Repetitive Reverse Voltage Vrrm Max:100V, Forward Current If(AV):30A, Forward Voltage VF Max:870mV, Forward Surge Current Ifsm Max:530A, Operating |
| STPS30SM120SFP | 功能描述:DIODE SCHOTTKY 120V TO220FPAB 制造商:stmicroelectronics 系列:ECOPACK?2 包裝:管件 零件狀態(tài):有效 二極管類型:肖特基 電壓 - DC 反向（Vr）（最大值）:120V 電流 - 平均整流（Io）:30A 不同 If 時(shí)的電壓 - 正向（Vf）:950mV @ 30A 速度:快速恢復(fù) = 200mA（Io） 反向恢復(fù)時(shí)間（trr）:- 不同?Vr 時(shí)的電流 - 反向漏電流:275μA @ 120V 不同?Vr，F(xiàn) 時(shí)的電容:- 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商器件封裝:TO-220FPAB 工作溫度 - 結(jié):150°C（最大） 標(biāo)準(zhǔn)包裝:50 |
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