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參數(shù)資料
| 型號： | STPS30L30CG-TR |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 15 A, 30 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 110K |
| 代理商： | STPS30L30CG-TR |
Characteristics
STPS30L30C
2/9
Doc ID 5506 Rev 6
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 0.24 x IF(AV) + 0.009 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
30
V
IF(RMS)
Forward rms current
30
A
IF(AV)
Average forward current
δ = 0.5
Tc = 140 °C,
Per diode
Per device
15
30
A
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal,
220
A
IRRM
Peak repetitive reverse current
tp = 2 s square, F= 1 kHz square
1
A
IRSM
Non repetitive peak reverse current
tp = 100 s square
3
A
PARM
(1)
Repetitive peak avalanche power
tp = 1 s Tj = 25 °C
5300
W
VARM
(2)
Maximum repetitive peak avalanche
voltage
tp < 1 s Tj < 150 °C
IAR < 35 A
45
V
VASM
Maximum single pulse peak
avalanche voltage
tp < 1 s Tj < 150 °C
IAR < 35 A
45
V
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature (3)
150
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
1.
For temperature or pulse time duration deratings, refer to Figure 4. and Figure 5.. More details regarding the avalanche
energy measurements and diode validation in the avalanche are provided in the application notes AN1768 and AN2025.
2.
Refer to Figure 12
3.
condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
Table 3.
Thermal resistance(1)
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
Total
1.5
0.8
°C/W
Rth(c)
Coupling
0.1
1.
When the diodes 1 and 2 are used simultaneously:
Δ Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
1.5
mA
Tj = 125 °C
170
350
mA
VF
Forward voltage drop
Tj = 25 °C
IF = 15 A
0.46
V
Tj = 125 °C
0.33
0.37
Tj = 25 °C
IF = 30A
0.57
Tj = 125 °C
0.43
0.5
1.
Pulse test: tp = 380 s, δ < 2%
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STPS30L30CGTRL | 功能描述:肖特基二極管與整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| STPS30L30CGTRLP | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK T/R |
| STPS30L30CGTRLPBF | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Schottky Rectifier, 2 x 15 A |
| STPS30L30CGTRR | 功能描述:肖特基二極管與整流器 30 Amp 30 Volt Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| STPS30L30CGTRRP | 制造商:Vishay Angstrohm 功能描述:Diode Schottky 30V 30A 3-Pin(2+Tab) D2PAK T/R |
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