參數(shù)資料
型號(hào): STPS2045CR
廠(chǎng)商: STMICROELECTRONICS
元件分類(lèi): 整流器
英文描述: 10 A, 45 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC, I2PAK-3
文件頁(yè)數(shù): 3/10頁(yè)
文件大小: 153K
代理商: STPS2045CR
Characteristics
STPS2045C
2/10
Doc ID 3506 Rev 6
1
Characteristics
When the diodes 1 and 2 are used simultaneously :
Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 2.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward current
δ = 0.5
TO-220AB
D2PAK I2PAK
Tc = 155 °C
Per diode
10
A
TO-220FPAB
Tc = 125 °C
Per device
20
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
180
A
PARM
Repetitive peak avalanche power
tp = 1 μs Tj = 25 °C
4000
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
°C
Table 3.
Thermal resistances parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AB / D2PAK / I2PAK
Per diode
Total
2.2
1.3
°C/W
TO-220FPAB
Per diode
Total
4.5
3.5
Rth(c)
Coupling
TO-220AB / D2PAK / I2PAK
Coupling
0.3
°C/W
TO-220FPAB
2.5
dPtot
dTj
<
1
Rth(j-a)
Table 4.
Static electrical characteristics (per diode)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
100
μA
Tj = 125 °C
7
15
mA
VF
Forward voltage drop
Tj = 125 °C
IF = 10 A
0.5
0.57
V
Tj = 25 °C
IF = 20 A
0.84
Tj = 125 °C
0.65
0.72
1.
Pulse test : tp = 380 μs, δ < 2%
To evaluate the conduction losses use the following equation : P = 0.42 x IF(AV) + 0.015 IF
2
(RMS)
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