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參數(shù)資料
| 型號(hào)： | STPS200170TV1Y |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 100 A, 170 V, SILICON, RECTIFIER DIODE |
| 封裝： | ROHS COMPLIANT, ISOTOP-4 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 101K |
| 代理商： | STPS200170TV1Y |
Characteristics
STPS200170TV1Y
2/7
Doc ID 17207 Rev 1
1
Characteristics
When the diodes are used simultaneously:
Tj(diode1) = P(diode1) X Rth(j-c) (per diode) + P(diode2) X Rth(c)
To evaluate the conduction losses use the following equation:
P = 0.5 x IF(AV) + 0.0018 IF
2
(RMS)
Table 2.
Absolute ratings - limiting values per diode at Tamb = 25 °C, unless otherwise specified
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
170
V
IF(RMS)
Forward rms current
200
A
IF(AV)
Average forward current,
δ = 0.5
Tc = 105 °C per diode
100
A
IFSM
Surge non repetitive forward current tp = 10 ms sinusoidal
700
A
PARM
Repetitive peak avalanche power
tp = 1 s, Tj = 25 °C
100000
W
Tstg
Storage temperature range
-55 to +150
°C
Tj
Operating junction temperature range(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
-40 to +150
°C
Table 3.
Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
Per diode
0.52
°C/W
Total
0.31
Rth(c)
Coupling thermal resistance
0.1
dP
tot
dT
j
---------------
1
R
th j
a
–
()
--------------------------
<
Table 4.
Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
--
200
A
Tj = 125 °C
-
30
100
mA
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 100 A
-
0.85
V
Tj = 150 °C
-
0.63
0.68
Tj = 25 °C
IF = 200 A
-
1.01
Tj = 150 °C
-
0.78
0.86
1.
Pulse test: tp = 5 ms, δ < 2 %
2.
Pulse test: tp = 380 s, δ < 2 %
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