參數(shù)資料
型號: STPS16L45CFP
廠商: STMICROELECTRONICS
元件分類: 整流器
英文描述: 8 A, 45 V, SILICON, RECTIFIER DIODE
封裝: TO-220FPAB, 3 PIN
文件頁數(shù): 3/5頁
文件大?。?/td> 83K
代理商: STPS16L45CFP
Obsolete
Product(s)
- Obsolete
Product(s)
STPS16L45CT/CFP
3/5
1E-3
1E-2
1E-1
1E+0
0
20
40
60
80
100
120
IM(A)
Tc=75°C
Tc=25°C
Tc=125°C
t(s)
IM
t
δ=0.5
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220AB).
1E-4
1E-3
1E-2
1E-1
1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
T
δ=tp/T
tp
Fig. 6-1: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220AB).
0
5
10
15
20
25
30
35
40
45
1E-2
1E-1
1E+0
1E+1
1E+2
2E+2
VR(V)
IR(mA)
Tj=125°C
Tj=75°C
Tj=25°C
Tj=150°C
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values) (per diode).
12
5
10
20
50
100
200
500
1000
2000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values) (per diode).
1E-3
1E-2
1E-1
1E+0
0
10
20
30
40
50
60
70
80
90
100
IM(A)
Tc=25°C
Tc=100°C
Tc=50°C
IM
t
δ=0.5
t(s)
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values per
diode, TO-220FPAB).
1E-3
1E-2
1E-1
1E+0
1E+1
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
T
δ=tp/T
tp
δ = 0.1
δ = 0.2
δ = 0.5
Single pulse
Fig. 6-2: Relative variation of thermal impedance
junction
to
case
versus
pulse
duration
(TO-220FPAB).
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