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參數(shù)資料
| 型號： | STPS10120CT |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 整流器 |
| 英文描述： | 5 A, 120 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 121K |
| 代理商： | STPS10120CT |
July 2007
Rev 1
1/8
8
STPS10120C
Power Schottky rectifier
Feature and benefits
■ High junction temperature capability
■ Good trade-off between leakage current and
forward voltage drop
■ Low leakage current
■ Avalanche capability specified
■ Insulated package
– TO-220FPAB
Insulating voltage = 2000 V
Typical package capacitance 12 pF
Description
Dual center tap Schottky rectifier suited for high
frequency switch mode power supplies.
Table 1.
Main product characteristics
IF(AV)
2 x 5 A
VRRM
120 V
Tj(max)
175° C
VF(typ)
0.64 V
Table 2.
Order code
Part number
Marking
STPS10120CT
STPS10120CFP
K
A2
A1
TO-220AB
STPS10120CT
K
A2
A1
K
A1
A2
TO-220FPAB
STPS10120CFP
Table 3.
Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
120
V
IF(RMS)
RMS forward current
30
A
IF(AV)
Average forward current,
δ = 0.5
TO-220AB
Tc = 160° C
Per diode
Per device
5
A
Tc = 150° C
10
TO-220FPAB
Tc = 150° C
Per diode
Per device
5
Tc = 135° C
10
IFSM
Surge non repetitive forward current
tp = 10 ms Sinusoidal
120
A
PARM
Repetitive peak avalanche power
tp = 1 s Tj = 25° C
3000
W
Tstg
Storage temperature range
-65 to + 175
° C
Tj
Maximum operating junction temperature(1)
1.
condition to avoid thermal runaway for a diode on its own heatsink
175
° C
dV/dt
Critical rate of rise of reverse voltage
10000
V/s
dPtot
dTj
---------------
1
Rth j
a
–
()
--------------------------
<
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