參數(shù)資料
型號: STPR120
廠商: 意法半導體
英文描述: HIGH EFFICIENCY FAST RECOVERY DIODE
中文描述: 高效快速恢復二極管
文件頁數(shù): 3/5頁
文件大?。?/td> 51K
代理商: STPR120
STPR120A
3/5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
IF(av) (A)
PF(av)(W)
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
δ
= 1
Fig. 1:
Average forward power dissipation versus
average forward current.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
6
7
8
9
10
IM(A)
P=1.5W
P=1.0W
P=0.5W
P=0.25W
δ
Fig. 2:
Peak current versus form factor.
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
Tamb(°C)
IF(av)(A)
Rth(j-a)=120°C/W
Rth(j-a)=Rth(j-l)
Fig. 3:
Average forward current versus ambient
temperature (
δ
=0.5).
1E-3
1E-2
1E-1
1E+0
0
1
2
3
4
5
6
t(s)
IM(A)
Ta=25°C
Ta=125°C
Ta=100°C
Fig. 4:
Non repetitive surge peak forward current
versus overload duration.
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2 5E+2
1
10
100
200
tp(s)
Zth(j-a)(°C/W)
Single pulse
Fig. 5:
Variation of thermal impedance junction to
ambient versus pulse duration (Recommended
pad layout, epoxy FR4, e(Cu)=35
μ
m).
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.01
0.10
1.00
10.00
50.00
VFM(V)
IFM(A)
Tj=150°C
Tj=25°C
Fig. 6:
Forward voltage drop versus forward cur-
rent (maximum values).
相關PDF資料
PDF描述
STPR120A HIGH EFFICIENCY FAST RECOVERY DIODE
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