- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381117 > STP9NB60 (意法半導體) N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) PDF資料下載
參數(shù)資料
| 型號： | STP9NB60 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 120K |
| 代理商： | STP9NB60 |
THERMAL DATA
TO-220
TO-220FP
R
thj-case
Thermal Resistance Junction-case
Max
1.0
3.12
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Typ
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
9
A
E
AS
850
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
600
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
50
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V
I
D
= 4.5 A
0.65
0.75
I
D(on)
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
9.0
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 4.5 A
3.0
6.5
S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
1480
210
25
1924
273
33
pF
pF
pF
STP9NB60/FP
2/9
相關PDF資料 |
PDF描述 |
|---|---|
| STPC CONSUMER | Multimedia PC on a Chip(多媒體PC) |
| STPC12GDYC | LOW PASS FILTER TO 5 GHZ, 20DB REJ |
| STPC12GEYC | X86 Core PC Compatible System-on-Chip for Terminals |
| STPC12GEYI | X86 Core PC Compatible System-on-Chip for Terminals |
| STPCI2GDY | X86 Core PC Compatible System-on-Chip for Terminals |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP9NB60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 0.7ohm - 9A TO-220/TO220FP PowerMESH MOSFET |
| STP9NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET |
| STP9NC60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET |
| STP9NC65 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
| STP9NC65FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 650V - 0.75omp - 8A TO-220/TO-220FP PowerMesh⑩II MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。