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參數(shù)資料
| 型號： | STP50NE10 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 100V-0.021Ω-50A-D2PAK STripFETTM Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道100V的，0.021Ω- 50A條，采用D2PAK STripFETTM功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | STP50NE10 |
STP50NE10
N - CHANNEL 100V - 0.021
- 50A - D
2
PAK
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.021
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW GATE CHARGE AT 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest developmentof
STMicroelectronics
unique
Size
”
strip-based
process. The resulting
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
Feature
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAYDRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
INTERNAL SCHEMATIC DIAGRAM
December 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
100
V
V
DGR
100
±
20
50
V
V
GS
I
D
I
D
I
DM
(
)
P
tot
V
A
35
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
200
A
150
W
1
W/
o
C
dv/dt (
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
o
C
(
1
) I
SD
≤
50 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
<0.027
I
D
STP50NE10
100 V
50 A
1
2
3
TO-220
1/8
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