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參數(shù)資料
| 型號： | STP4NA60FI |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強型功率MOS器件 |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 203K |
| 代理商： | STP4NA60FI |
STP4NA60
STP4NA60FI
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
I
TYPICAL R
DS(on)
= 1.85
I
±
30V GATE TO SOURCE VOLTAGE RATING
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW INTRINSIC CAPACITANCES
I
GATE GHARGE MINIMIZED
I
REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
This series of POWER MOSFETS represents the
most advanced high voltage technology. The
optimized
cell
layout
proprietary edge termination concur to give the
device low R
DS(on)
and gate charge, unequalled
ruggedness and superior switching performance.
coupled
with
a
new
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SWITCH MODE POWERSUPPLIES (SMPS)
I
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 2.2
< 2.2
I
D
STP4NA60
STP4NA60FI
600 V
600 V
4.3 A
2.7 A
1
2
3
TO-220
ISOWATT220
November 1996
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
STP4NA60
STP4NA60FI
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
600
V
V
DGR
600
V
V
GS
±
30
V
I
D
4.3
2.7
A
I
D
2.8
1.8
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
17.2
17.2
A
100
40
W
Derating Factor
0.8
0.32
W/
o
C
V
ISO
Insulation Withstand Voltage (DC)
2000
V
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulsewidth limited by safe operating area
150
1
2
3
1/10
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PDF描述 |
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| STP4NA60FP | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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| STP4NA80FI | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP4NA90 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STP4NA60FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP4NA80 | 功能描述:MOSFET RO 511-STP4NB80 TO-220 N-CH 800V 4A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP4NA80FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP4NA90 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| STP4NA90FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
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