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參數(shù)資料
| 型號： | STP40NF03L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:150uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | ? -通道30V的- 0.020歐姆- 40A至- 220 STripFET功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | STP40NF03L |
THERMAL DATA
R
thj-case
R
thj-amb
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
2.1
62.5
300
o
C/W
o
C/W
o
C
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwisespecified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A
V
GS
= 0
30
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating
V
GS
=
±
20 V
T
c
=125
o
C
1
10
μ
A
μ
A
nA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold Voltage V
DS
= V
GS
I
D
= 250
μ
A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V
V
GS
= 4.5 V
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
I
D
= 20 A
I
D
= 20 A
0.018
0.028
0.022
0.035
A
I
D(on)
On State Drain Current
40
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=20 A
20
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
830
230
92
pF
pF
pF
STP40NF03L
2/8
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| STP40NF03L | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
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| STP40NF10 | 功能描述:MOSFET N-Ch 100 Volt 50 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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