參數(shù)資料
型號(hào)： STP3020L
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET
中文描述： ? -通道30V的- 0.019ohm - 40A條-對(duì)220 STripFET功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 83K
代理商： STP3020L
STP3020L
N - CHANNEL 30V - 0.019
- 40A - TO-220
STripFET
POWER MOSFET
I
TYPICAL R
DS(on)
= 0.019
I
LOW GATE CHARGE A 100
o
C
I
APPLICATIONORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
” strip-based process. The resulting transi-
stor shows extremelyhigh packing density forlow
on-resistance, rugged avalance characteristics
and less critical alignment steps therefore a re-
markable manufacturingreproducibility.
”Single
Feature
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOIDAND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-AC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc.)
INTERNAL SCHEMATIC DIAGRAM
March 1999
TYPE
V
DSS
30 V
R
DS(on)
< 0.022
I
D
STP3020L
40 A
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
V
±
20
40
V
A
I
D
28
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
160
A
80
W
0.53
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
1
2
3
TO-220
1/8
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