參數(shù)資料
型號: STP20NM60
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET
中文描述: N溝道600V的- 0.25ohm - 20A條TO-220/FP/D2PAK/I2PAK的MDmesh?功率MOSFET
文件頁數(shù): 9/20頁
文件大?。?/td> 221K
代理商: STP20NM60
9
32-bit SBus Master I/O Controller
Master I/O
STP2000QFP
July 1997
DC Characteristics
Symbol
Parameter
Min
Typ
Max
Units
V
IH
V
IL
V
OH
V
OL
I
IN
I
OH
Input high voltage
2.0
V
Input Low voltage
0.8
V
High level output voltage
4.4
4.5
V
Low level output voltage
0
0.1
V
Input leakage current
-10
10
μ
A
High level source
current (V
OH
= 2.4 V)
I
OH
= 2.0 mA
I
OH
= 4.0 mA
I
OH
= 8.0 mA
I
OH
= 16.0 mA
I
OH
= 24.0 mA
I
OL
= -2.0 mA
I
OL
= -4.0 mA
I
OL
= -8.0 mA
I
OL
= -16.0 mA
I
OL
= -24.0 mA
I
OL
= -48.0 mA
SCSIPAD (V
OL
= 0.5 V)
SCSIPADF (V
OL
= 0.5 V)
2
mA
4
mA
8
mA
16
mA
24
mA
I
OL
Low level sink
current (V
OL
= 0.4 V)
2
mA
4
mA
8
mA
16
mA
24
mA
48
mA
48
mA
48
mA
This Material Copyrighted by Its Respective Manufacturer
相關(guān)PDF資料
PDF描述
STP25N05FI TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 16A I(D) | TO-220VAR
STP25N05 TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 25A I(D) | TO-220
STP25N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP3010PGA 32-Bit Graphics (GUI) Accelerator
STP30NE06 Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:47uF; Capacitance Tolerance:+/- 20%; ESR:300mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP20NM60A 功能描述:MOSFET N-Ch 650 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20NM60FD 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20NM60FP 功能描述:MOSFET N-Ch 600 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20NM65N 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP210N75F6 功能描述:MOSFET N-Ch 75V 3mOhm 120A STripFET VI RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube