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參數(shù)資料
| 型號： | STP20NE06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET |
| 中文描述： | ? -通道60V的- 0.06歐姆- 20A條TO-220/TO-220FP STripFET功率MOSFET |
| 文件頁數(shù)： | 12/20頁 |
| 文件大小： | 221K |
| 代理商： | STP20NE06 |
12
STP2000QFP
32-bit SBus Master I/O Controller
Master I/O
July 1997
1. These minimum numbers are required to comply with ANSI SCSI spec. For Synchronous SCSI data transfers and FASTCLK enabled,
the clock inputs must also meet the following requirements: 2t
CP
+ t
CL
> 97.92 ns and 2t
CP
+ t
CH
> 97.92 ns.
Synchronous SCSI Input Cycle
42
Data setup to SCSI_REQ/SCSI_ACK low
5
–
ns
43
Data hold from SCSI_REQ/SCSI_ACK low
15
–
ns
44
SCSI_REQ assertion period
27
–
ns
45
SCSI_REQ negation period
20
–
ns
46
SCSI_ACK assertion period
20
–
ns
47
SCSI_ACK negation period
20
–
ns
AC Characteristics: Ethernet Timing
Signal #
Parameter
Min
Max
Units
48
ENET_TCLK period
99
101
ns
49
ENET_TCLK high pulse duration
45
–
ns
50
ENET_TCLK low pulse duration
45
–
ns
51
ENET_TCLK rise time
–
8
ns
52
ENET_TCLK fall time
–
8
ns
53
ENET_TENA propagation delay after rising edge of ENET_TCLK
–
25
ns
54
ENET_TENA hold time after ENET_TCLK rising
7
–
ns
55
ENET_TX propagation delay after ENET_TCLK rising
–
32
ns
56
ENET_TX hold time after ENET_TCLK rising
7
–
ns
57
ENET_RCLK period
85
118
ns
58
ENET_RCLK high pulse duration
38
–
ns
59
ENET_RCLK low pulse duration
38
–
ns
60
ENET_RCLK rise time
–
8
ns
61
ENET_RCLK fall time
–
8
ns
62
ENET_RX data rise time
–
8
ns
63
ENET_RX data fall time
–
8
ns
64
ENET_RX data hold time from ENET_RCLK rising
5
–
ns
65
ENET_RX data setup time to ENET_RCLK rising
40
–
ns
66
ENET_RENA low duration
120
–
ns
67
ENET_CLSN high duration
110
–
ns
68
ENET_RENA hold time after the rising edge of ENET_RCLK
1
–
ns
69
ENET_RENA defer before ENET_TENA
356
–
ns
70
ENET_RENA extended after ENET_RCLK last falling
–
275
ns
AC Characteristics: SCSI TIming (Continued)
Signal #
Parameter
Conditions
Min
Max
Units
This Material Copyrighted by Its Respective Manufacturer
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| STP20N06 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
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| STP20NM60FP | N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STP20NM505 | N-CHANNEL 500V - 0.20ohm - 20A TO-220/FP/D2PAK/I2PAK MDmesh?Power MOSFET |
| STP20NF06 | N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP20NE06FP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET |
| STP20NE06L | 功能描述:MOSFET N-Ch 60 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NE06LFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET |
| STP20NE10 | 功能描述:MOSFET RO 511-STP24NF10 TO-220 N-CH 100V 20A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20NF06 | 功能描述:MOSFET N-Ch 60 Volt 20 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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