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參數(shù)資料
| 型號： | STP20N10FI |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| 中文描述： | 250 的低電流運(yùn)算，低反向泄露，低噪聲穩(wěn)壓二極管 |
| 文件頁數(shù)： | 1/20頁 |
| 文件大?。?/td> | 221K |
| 代理商： | STP20N10FI |
DATA SHEET
1
STP2000QFP
Master I/O
32-bit SBus Master I/ O Controller
D
ESCRIPTION
The STP2000 Master I/ O Controller is an integrated SBus master device with built-in standard I/ O capabili-
ties for general purpose computing or embedded applications. The STP2000 directly interfaces the CPU
through the system bus, SBus, to three major I/ O channels for peripherals. The I/ O channels include SCSI-II,
ethernet and a parallel port. Together, with the STP2001 Slave I/ O Controller, it provides a complete I/ O
subsystem.
The STP2000 SBus interface is a 32-bit interface that supports both DMA and slave modes. There is data buff-
ering and flow control on each of the I/ O channels. Each channel has access to the SBus through the controller
which is capable of DMA transfers of up to 32-byte bursts. The SBus slave port is used mostly for status and
control.
The STP2000 incorporates an ethernet controller, a Fast 8-bit SCSI-II controller, and a Centronics parallel port
controller in a single package. The SCSI-II channel directly drives external peripherals. The ethernet channel
can be connected to an external transceiver chip that supports twisted pair ethernet or AUI ethernet. The par-
allel port channel can be routed to external transceivers.
Features
Benefits
Single-chip solution to standard SPARC DVMA devices
Compatible with microSPARC, SuperSPARC and any
SBus based system
Supports concurrent 10 MByte/sec SCSI transfers,
1.25 MByte/sec Ethernet transfers, and 4 MByte/sec
Parallel Port transfers
Direct master/slave SBus interface
JTAG internal and boundary SCAN logic
160-pin PQFP packaging
IC is also available from NCR Corp. (PN - NCR89C100)
Saves cost, power, board space, and weight
Standard low-cost solution
Improved system performance
Improved system performance
Improved chip and board level testability
Cost effective packaging
Second source
July 1997
This Material Copyrighted by Its Respective Manufacturer
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參數(shù)描述 |
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| STP20N10L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STP20N10LFI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
| STP20N20 | 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20N65M5 | 功能描述:MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP20N90K5 | 功能描述:N-CHANNEL 900 V, 0.24 OHM TYP., 制造商:stmicroelectronics 系列:MDmesh? K5 包裝:管件 零件狀態(tài):在售 FET 類型:N 溝道 技術(shù):MOSFET（金屬氧化物） 漏源電壓（Vdss）:900V 電流 - 連續(xù)漏極（Id）（25°C 時）:20A（Tc） 驅(qū)動電壓（最大 Rds On，最小 Rds On）:10V 不同 Id 時的 Vgs（th）（最大值）:5V @ 100μA 不同 Vgs 時的柵極電荷?（Qg）（最大值）:40nC @ 10V Vgs（最大值）:±30V 不同 Vds 時的輸入電容（Ciss）（最大值）:1500pF @ 100V FET 功能:- 功率耗散（最大值）:250W（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:250 毫歐 @ 10A，10V 工作溫度:-55°C ~ 150°C（TJ） 安裝類型:通孔 供應(yīng)商器件封裝:TO-220 封裝/外殼:TO-220-3 標(biāo)準(zhǔn)包裝:50 |
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