參數(shù)資料
型號： STP20N10
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
中文描述： ? -通道增強型功率MOS器件
文件頁數(shù)： 8/20頁
文件大?。?/td> 221K
代理商： STP20N10
8
STP2000QFP
32-bit SBus Master I/O Controller
Master I/O
July 1997
E
LECTRICAL
C
HARACTERISTICS
1. Operation of the device at values in excess of those listed above will result in degradation or destruction of the device. All voltages
are defined with respect to ground. Functional operation of the device at these or any other conditions beyond those indicated under
“recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may
affect device reliability.
Absolute Maximum Ratings
[1]
Symbol
Parameter
Rating
Units
V
CC
V
IN
I
I
T
L
T
J
T
S
Power supply voltage
7.0
V
Input voltage
V
CC
+ 0.5
100
V
Current Drain V
CC
and GND
Lead temperature (less than 10 second soldering)
mA
250
°
C
°
C
°
C
Operating temperature
0 to +70
Storage temperature
-55 to +150
Recommended Operating Conditions
Symbol
Parameter
Min
Typ
Max
Units
V
CC
T
A
P
D
Supply voltage
4.75
5.0
5.25
V
Operating Temperature
0
25
70
°
C
Power consumption (@ 25 MHz SBus)
–
750
1400
mW
Capacitance
Symbol
Parameter
Typ
Max
Units
C
IN
C
OUT
C
BI
C
SCSI
Input capacitance
6
–
pF
Output capacitance
6
–
pF
Bidirectional pin capacitance
6
–
pF
SCSI pin capacitance
–
10
pF
This Material Copyrighted by Its Respective Manufacturer
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STP20N10FI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
STP20N10L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N10LFI 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N20 功能描述:MOSFET N-Ch 200 Volt 18 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP20N65M5 功能描述:MOSFET N-Ch 650V 0.168 Ohm 18A Mdmesh V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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