參數(shù)資料
型號: STP14NF10FP
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET
中文描述: N溝道100V的- 0.115歐姆-第15A TO-220/TO-220FP/D2PAK低柵極電荷STripFET⑩二功率MOSFET
文件頁數(shù): 2/8頁
文件大小: 247K
代理商: STP14NF10FP
STP14NF06
2/8
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.33
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
60
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±20V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 7 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
V
Static Drain-source On
Resistance
0.10
0.12
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max,
V
GS
= 10V
14
A
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 7 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
7
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
Input Capacitance
361
pF
Output Capacitance
54
pF
C
rss
Reverse Transfer
Capacitance
21
pF
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