參數(shù)資料
型號： STP13NK60ZFP
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 600V-0.48ohm-13A TO-220/FP/D2PAK/I2PAK/TO-247 Zener-Protected SuperMESH⑩Power MOSFET
中文描述： N溝道600V的0.48ohm - 13A條TO-220/FP/D2PAK/I2PAK/TO-247齊納保護(hù)SuperMESH⑩功率MOSFET
文件頁數(shù)： 2/14頁
文件大?。?/td> 657K
代理商： STP13NK60ZFP
STP13NK60Z, STP13NK60ZFP, STB13NK60Z, STB13NK60Z-1, STW13NK60Z
2/14
ABSOLUTE MAXIMUM RATINGS
Symbol
( ) Pulse width limited by safe operating area
(1) I
SD
≤
13 A, di/dt
≤
200A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
(*) Limited only by maximum temperature allowed
THERMAL DATA
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
(#) When mounted on minimum Footprint
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
STP13NK60Z
STB13NK60Z/-1
STW13NK60Z
STP13NK60ZFP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
13
13 (*)
A
8.2
8.2 (*)
A
Drain Current (pulsed)
52
52 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5K
)
Peak Diode Recovery voltage slope
150
35
W
1.20
0.27
W/°C
V
ESD(G-S)
dv/dt (1)
V
ISO
T
j
T
stg
4000
V
4.5
V/ns
Insulation Withstand Voltage (DC)
-
2500
V
Operating Junction Temperature
Storage Temperature
-55 to 150
°C
TO-220
I
2
PAK
TO-247
D
2
PAK
TO-220FP
Rthj-case
Rthj-pcb
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max (#)
Thermal Resistance Junction-ambient Max
0.83
3.6
°C/W
°C/W
°C/W
°C
60
62.5
300
Maximum Lead Temperature For Soldering Purpose
Parameter
Max Value
10
Unit
A
400
mJ
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
相關(guān)PDF資料
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