參數資料
型號： STP12NB30
廠商： 意法半導體
英文描述： N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
中文描述： ? -通道增強型MOSFET的PowerMESH
文件頁數： 1/5頁
文件大小： 689K
代理商： STP12NB30
Absolute Maximum Ratings
( T
J
= 25°C unless otherwise specified )
Symbol
Parameter
Condition
Ratings
Units
V
DRM
Repetitive Peak Off-State Voltage
600
V
I
T(RMS)
R.M.S On-State Current
T
C
= 100 °C
12
A
I
TSM
Surge On-State Current
One Cycle, 50Hz/60Hz, Peak,
Non-Repetitive
119/130
A
I
2
t
I
2
t
71
A
2
s
P
GM
Peak Gate Power Dissipation
5.0
W
P
G(AV)
Average Gate Power Dissipation
0.5
W
I
GM
Peak Gate Current
2.0
A
V
GM
Peak Gate Voltage
10
V
T
J
Operating Junction Temperature
- 40 ~ 125
°C
T
STG
Storage Temperature
- 40 ~ 150
°C
Mass
2.0
g
Feb, 2003. Rev. 2
Features
◆
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 12 A )
◆
High Commutation dv/dt
General Description
This device is suitable for AC switching application, phase
control application such as fan speed and temperature mod-
ulation control, lighting control and static switching relay.
2.T2
3.Gate
1.T1
Symbol
○
○
○
TO-220
▼▲
1/5
STP12A60
SemiWell
Semiconductor
1
2
3
Bi-Directional Triode Thyristor
copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
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相關代理商/技術參數
參數描述
STP12NB30FP 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
STP12NK30Z 功能描述:MOSFET N-Ch 300 Volt 9 Amp Zener SuperMESH3 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP12NK60Z 功能描述:MOSFET N-Ch 600 V 0.53 Ohm Zener SuperMESH 10A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STP12NK60Z_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH? Power MOSFET
STP12NK80Z 功能描述:MOSFET N-Ch 800 Volt 10.5A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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