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參數(shù)資料
| 型號： | STP11NM60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 600V - 0.4ohm-11A TO-220/TO-220FP/D2PAK/I2PAK MDmesh⑩Power MOSFET |
| 中文描述： | N溝道600V的- 0.4ohm - 11A條TO-220/TO-220FP/D2PAK/I2PAK的MDmesh⑩功率MOSFET |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 564K |
| 代理商： | STP11NM60 |
1/12
May 2003
STP11NM60 - STP11NM60FP
STB11NM60 - STB11NM60-1
N-CHANNEL 600V - 0.4
-11A TO-220/TO-220FP/D
2
PAK/I
2
PAK
MDmeshPower MOSFET
(*)Limited only by maximum temperature allowed
(1)I
SD
<11A, di/dt<400A/μs, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
TYPICAL R
DS
(on) = 0.4
HIGH dv/dt AND AVALANCHE CAPABILITIES
100% AVALANCHE TESTED
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
DESCRIPTION
The MDmesh is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STP11NM60
STP11NM60FP
STB11NM60
STB11NM60-1
600 V
600 V
600 V
600 V
< 0.45
< 0.45
< 0.45
< 0.45
11 A
11 A
11 A
11 A
Parameter
Value
Unit
STP(B)11NM60(-1)
STP11NM60FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
±30
V
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
11
11 (*)
A
7
7 (*)
A
Drain Current (pulsed)
44
44 (*)
A
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
160
35
W
1.28
0.28
W/°C
V/ns
dv/dt(1)
V
ISO
T
stg
T
j
15
Insulation Winthstand Voltage (DC)
--
2500
V
Storage Temperature
–65 to 150
°C
Max. Operating Junction Temperature
150
°C
TO-220
1
2
3
123
I
2
PAK
1
2
3
TO-220FP
1
3
D
2
PAK
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STP11NM60_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650V TJmax - 0.4OHM - 11A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET |
| STP11NM60A | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60AFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET |
| STP11NM60FD | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STP11NM60FDFP | 功能描述:MOSFET N-Ch 600 Volt 11 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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