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參數(shù)資料
| 型號： | STN851 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 中文描述： | 低壓快速開關(guān)NPN電源晶體管 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 215K |
| 代理商： | STN851 |
THERMAL DATA
R
thj-amb
Device mounted on a P.C.B. area of 1 cm
2
Thermal Resistance Junction-ambient Max
78
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0)
Emitter Cut-off Current
(I
C
= 0)
Collector-Base
Breakdown Voltage
(I
E
= 0)
V
(BR)CEO
Collector-Emitter
Breakdown Voltage
(I
B
= 0)
V
(BR)EBO
Emitter-Base
Breakdown Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
CB
= 120 V
V
CB
= 120 V T
j
= 100
o
C
V
EB
= 7 V
50
1
nA
μ
A
nA
I
EBO
10
V
(BR)CBO
I
C
= 100
μ
A
150
V
I
C
= 10 mA
60
V
I
E
= 100
μ
A
7
V
I
C
= 100 mA I
B
= 5 mA
I
C
= 1 A I
B
= 50 mA
I
C
= 2 A I
B
= 50 mA
I
C
= 5 A I
B
= 200 mA
I
C
= 4 A I
B
= 200 mA
10
70
140
320
50
120
250
500
mV
mV
mV
mV
V
BE(sat)
Base-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
1
1.15
V
V
BE(on)
I
C
= 4 A V
CE
= 1 V
0.89
1
V
h
FE
I
C
= 10 mA V
CE
= 1 V
I
C
= 2 A V
CE
= 1 V
I
C
= 5 A V
CE
= 1 V
I
C
= 10 A V
CE
= 1 V
V
CE
= 10 V I
C
= 100 mA
V
CB
= 10 V f = 1 MHz
150
150
90
30
300
270
140
50
350
f
T
Transition frequency
130
MHz
C
CBO
Collector-Base
Capacitance
RESISTIVE LOAD
Turn- on Time
Storage Time
Fall Time
50
pF
t
on
t
s
t
f
I
C
= 1 A V
CC
= 10 V
I
B1
= - I
B2
= 0.1 A
50
1.35
120
ns
μ
s
ns
* Pulsed: Pulse duration = 300
μ
s, duty cycle = 1.5 %
STN851
2/7
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