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參數(shù)資料
| 型號(hào)： | STN817A |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | PNP MEDIUM POWER TRANSISTOR |
| 中文描述： | PNP中等功率晶體管 |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | STN817A |
STF817A - STN817A
2 Electrical characteristics
3/9
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
On/off states
(1) Device mounted on a PCB area of 1 cm2
(2) Pulsed: Pulse duartion = 300μs, duty cycle 1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
ECS
Collector Cut-off Current
(V
BE
=0)
V
CE
= -80 V
-500
μA
I
CEO
Collector Cut-off Current
(I
B
=0)
V
CE
= -80 V
-1
mA
I
EBO
Emitter Cut-off Current (I
C
= 0) V
EB
= -5V
-100
μA
V
CEO(sus)
Note
2
Collector-Emitter Sustaining
Voltage (I
B
= 0)
I
C
=-10mA
-80
V
V
CE(sat)
Note
2
Collector-Emitter Saturation
Volatge
I
C
= -100 mA, I
B
= -10m A
I
C
= -1 A, I
B
= -100m A
-0.25
-0.5
V
V
V
BE(sat)
Note
2
Base-Emitter Saturation
Volatge
I
C
= -100 mA, I
B
= -10m A
I
C
= -1 A, I
B
= -100m A
-1
-1.1
V
V
h
FE
Note
2
DC Current Gain
I
C
= -100 mA, V
CE
= -2V
I
C
= -500 mA, V
CE
= -2V
I
C
= -1A, V
CE
= -2V
140
80
30
f
T
Transition Frequency
I
C
= -0.1A, V
CE
= -10V
50
MHz
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