參數(shù)資料
型號: STN4NF03L
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STripFET⑩ II POWER MOSFET
中文描述: N溝道30V的- 0.039ohm - 6.5A的SOT - 223 STripFET⑩二功率MOSFET
文件頁數(shù): 2/8頁
文件大?。?/td> 260K
代理商: STN4NF03L
STN4NF03L
2/8
THERMAL DATA
Rthj-PCB
Rthj-PCB
Note: (*) When mounted on 1 in
2
FR-4 board , 2 oz Cu, t<10s.
Note: (**) Minimum recommended footprint
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
Thermal Resistance Junction-PC Board Max (*)
Thermal Resistance Junction-PCB Max (**)
Maximum Lead Temperature For Soldering Purpose
(1.6 mm from case for 10s)
38
100
°C/W
°C/W
T
l
260
°C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
30
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±16V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 2 A
V
GS
= 5 V, I
D
= 2 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
1
V
R
DS(on)
Static Drain-source On
Resistance
0.039
0.05
0.046
0.06
Parameter
Test Conditions
V
DS
= 10 V , I
D
=2 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
Max.
Unit
Forward Transconductance
1
3
S
Input Capacitance
330
pF
Output Capacitance
90
pF
C
rss
Reverse Transfer
Capacitance
40
pF
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參數(shù)描述
STN4NF03L_06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.039ohm - 6.5A - SOT-223 STripFET II Power MOSFET
STN4NF03L_07 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30 V - 0.039 ヘ - 6.5 A - SOT-223 STripFET⑩ II Power MOSFET
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