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參數(shù)資料
| 型號(hào)： | STN2NE10L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 100V-0.33Ω-2A-SOT-223 STripFET Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道100V的-0.33Ω- 2A型，采用SOT - 223 STripFET功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | STN2NE10L |
THERMAL DATA
R
thj-pcb
R
thj-amb
T
l
Thermal Resistance Junction-PC Board Max
Thermal Resistance Junction-ambient Max
(Surface Mounted)
Maximum Lead Temperature For Soldering Purpose
50
60
260
o
C/W
o
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 25 V)
2
A
E
AS
20
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
100
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
V
GS
=
±
20 V
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
V
DS
= V
GS
I
D
= 250
μ
A
1
1.7
2.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10 V I
D
= 1A
V
GS
= 5 V I
D
= 1A
0.33
0.38
0.4
0.45
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
2
A
DYNAMIC
Symbol
g
fs
(
)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 1 A
1.2
2.5
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0 V
345
45
20
450
60
25
pF
pF
pF
STN2NE10L
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STN2NE10L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.33з -2A - SOT-223 |
| STN2NF06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET |
| STN2NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET |
| STN2NF10 | 功能描述:MOSFET N-Ch 100 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN2NF10_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.23ヘ - 2.4A - SOT-223 STripFET⑩ II Power MOSFET |
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