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參數(shù)資料
| 型號： | STN2NE06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 60V-0.18Ω-2A-SOT-223 STripFET Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的-0.18Ω- 2A型，采用SOT - 223 STripFET功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 60K |
| 代理商： | STN2NE06 |
STN2NE06
N-CHANNEL 60V - 0.18
- 2A - SOT-223
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.18
I
EXCEPTIONAL dv/dt CAPABILITY
I
AVALANCHE RUGGED TECHNOLOGY
I
100 % AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
" stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
"Single
Feature
APPLICATIONS
I
DC MOTOR CONTROL (DISK DRIVES,etc.)
I
DC-DC & DC-AC CONVERTERS
I
SYNCHRONOUS RECTIFICATION
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
60 V
R
DS(on)
< 0.25
I
D
2 A
STN2NE06
December 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
60
V
60
V
V
GS
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
±
20
2
V
I
D
I
D
A
1.3
A
I
DM
(
)
8
A
P
tot
2.5
W
Derating Factor
0.02
W/
o
C
dv/dt(
1
)
Peak Diode Recovery voltage slope
6
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 150
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
8 A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
150
1
2
2
3
SOT-223
1/5
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| STN2NE10 | 功能描述:MOSFET N-Ch 100 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN2NE10L | 功能描述:MOSFET N-Ch 100 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STN2NE10L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.33з -2A - SOT-223 |
| STN2NF06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 60V - 0.12ohm - 2A - SOT-223 STripFET POWER MOSFET |
| STN2NF06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET |
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